TPH3208LDG

TPH3208LDG

GANFET N-CH 650V 20A PQFN


  • Manufacturer: Transphorm
  • Origchip NO: 805-TPH3208LDG
  • Package: 3-PowerDFN
  • Datasheet: PDF
  • Stock: 861
  • Description: GANFET N-CH 650V 20A PQFN (Kg)

Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case 3-PowerDFN
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology GaNFET (Gallium Nitride)
Reach Compliance Code unknown
Power Dissipation-Max 96W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 130m Ω @ 13A, 8V
Vgs(th) (Max) @ Id 2.6V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±18V
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good