TPH3205WSBQA

TPH3205WSBQA

GANFET N-CH 650V 35A TO247


  • Manufacturer: Transphorm
  • Origchip NO: 805-TPH3205WSBQA
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 252
  • Description: GANFET N-CH 650V 35A TO247 (Kg)

Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Automotive, AEC-Q101
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 62m Ω @ 22A, 8V
Vgs(th) (Max) @ Id 2.6V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 400V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 8V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±18V
RoHS Status Non-RoHS Compliant
See Relate Datesheet

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