TP65H050WS

TP65H050WS

GANFET N-CH 650V 34A TO247-3


  • Manufacturer: Transphorm
  • Origchip NO: 805-TP65H050WS
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 612
  • Description: GANFET N-CH 650V 34A TO247-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology GaNFET (Cascode Gallium Nitride FET)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 119W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 400V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 12V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
See Relate Datesheet

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