PTF10153
| Parameters | |
|---|---|
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| JESD-30 Code | R-CDFM-F2 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 200°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| DS Breakdown Voltage-Min | 65V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 237W |
| Highest Frequency Band | L B |
| RoHS Status | Non-RoHS Compliant |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| JESD-609 Code | e0 |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
See Relate Datesheet