NESG3031M14-T3-A
| Parameters | |
|---|---|
| Factory Lead Time | [object Object] |
| Surface Mount | YES |
| Number of Terminals | 4 |
| Transistor Element Material | SILICON GERMANIUM |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| ECCN Code | EAR99 |
| Terminal Finish | TIN BISMUTH |
| Additional Feature | LOW NOISE |
| HTS Code | 8541.21.00.95 |
| Subcategory | BIP RF Small Signal |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-F4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 0.15W |
| Collector Current-Max (IC) | 0.035A |
| DC Current Gain-Min (hFE) | 220 |
| Collector-Emitter Voltage-Max | 4.3V |
| Highest Frequency Band | C B |
| Collector-Base Capacitance-Max | 0.25pF |
| RoHS Status | RoHS Compliant |
See Relate Datesheet