NE3512S02-T1D-A
| Parameters | |
|---|---|
| Factory Lead Time | [object Object] |
| Surface Mount | YES |
| Number of Terminals | 4 |
| Transistor Element Material | SILICON |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Additional Feature | LOW NOISE |
| Subcategory | Other Transistors |
| Terminal Position | QUAD |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PQMW-F4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 125°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (Abs) (ID) | 0.015A |
| DS Breakdown Voltage-Min | 3V |
| FET Technology | HETERO-JUNCTION |
| Power Dissipation-Max (Abs) | 0.165W |
| Highest Frequency Band | KU B |
| Power Gain-Min (Gp) | 12.5dB |
| RoHS Status | RoHS Compliant |
See Relate Datesheet