MT9VDDT6472HG-335F2
| Parameters | |
|---|---|
| Mount | Socket |
| Package / Case | 200-SODIMM |
| Number of Pins | 200 |
| Packaging | Bulk |
| Published | 2002 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 200 |
| Terminal Finish | TIN LEAD |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Additional Feature | AUTO/SELF REFRESH |
| HTS Code | 8542.32.00.36 |
| Subcategory | Other Memory ICs |
| Technology | CMOS |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 235 |
| Number of Functions | 1 |
| Supply Voltage | 2.5V |
| Terminal Pitch | 0.6mm |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 200 |
| Operating Supply Voltage | 2.5V |
| Number of Elements | 9 |
| Temperature Grade | COMMERCIAL |
| Max Supply Voltage | 2.7V |
| Min Supply Voltage | 2.3V |
| Memory Size | 512MB |
| Number of Ports | 1 |
| Speed | 333MT/s |
| Memory Type | DDR SDRAM |
| Clock Frequency | 166MHz |
| Supply Current-Max | 3.645mA |
| Data Bus Width | 72b |
| Organization | 64MX72 |
| Output Characteristics | 3-STATE |
| Memory Width | 72 |
| Standby Current-Max | 0.045A |
| Memory Density | 4831838208 bit |
| Max Frequency | 333MHz |
| Access Time (Max) | 0.7 ns |
| I/O Type | COMMON |
| Access Mode | SINGLE BANK PAGE BURST |
| Height | 31.8mm |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet