MT8HTF6464HDZ-667G1

MT8HTF6464HDZ-667G1

DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM


  • Manufacturer: Micron Technology Inc.
  • Origchip NO: 533-MT8HTF6464HDZ-667G1
  • Package: 200-SODIMM
  • Datasheet: PDF
  • Stock: 606
  • Description: DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM (Kg)

Details

Tags

Parameters
Mount Socket
Package / Case 200-SODIMM
Number of Pins 200
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 200
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory DRAMs
Technology CMOS
Terminal Position DUAL
Supply Voltage 1.8V
Terminal Pitch 0.6mm
Operating Supply Voltage 1.8V
Number of Elements 8
Temperature Grade COMMERCIAL
Max Supply Voltage 1.9V
Min Supply Voltage 1.7V
Memory Size 512MB
Speed 667MT/s
Memory Type DDR2 SDRAM
Clock Frequency 333MHz
Data Bus Width 64b
Organization 64MX64
Output Characteristics 3-STATE
Memory Width 64
Standby Current-Max 0.056A
Memory Density 4294967296 bit
Max Frequency 667MHz
Access Time (Max) 0.45 ns
I/O Type COMMON
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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