 
    | Parameters | |
|---|---|
| Memory Width | 64 | 
| Standby Current-Max | 0.064A | 
| Memory Density | 4294967296 bit | 
| Access Time (Max) | 0.7 ns | 
| I/O Type | COMMON | 
| Refresh Cycles | 8192 | 
| RoHS Status | ROHS3 Compliant | 
| Package / Case | 200-SODIMM | 
| Surface Mount | NO | 
| Number of Pins | 200 | 
| Published | 2005 | 
| JESD-609 Code | e3 | 
| Pbfree Code | yes | 
| Part Status | Discontinued | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 200 | 
| Terminal Finish | MATTE TIN | 
| Subcategory | DRAMs | 
| Technology | CMOS | 
| Terminal Position | DUAL | 
| Terminal Form | NO LEAD | 
| Peak Reflow Temperature (Cel) | 225 | 
| Supply Voltage | 2.6V | 
| Terminal Pitch | 0.6mm | 
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 
| Qualification Status | Not Qualified | 
| Operating Temperature (Max) | 70°C | 
| Power Supplies | 2.6V | 
| Temperature Grade | COMMERCIAL | 
| Memory Size | 512MB | 
| Speed | 400MT/s | 
| Memory Type | DDR SDRAM | 
| Supply Current-Max | 2.56mA | 
| Organization | 64MX64 | 
| Output Characteristics | 3-STATE |