MT16HTF51264HZ-800C1
| Parameters | |
|---|---|
| Memory Density | 34359738368 bit |
| Max Frequency | 800MHz |
| Access Time (Max) | 0.4 ns |
| I/O Type | COMMON |
| Refresh Cycles | 8192 |
| Access Mode | DUAL BANK PAGE BURST |
| Height Seated (Max) | 30.15mm |
| Length | 67.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 5 Weeks |
| Contact Plating | Gold |
| Mount | Socket |
| Package / Case | 200-SODIMM |
| Number of Pins | 200 |
| Published | 2010 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 200 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Additional Feature | AUTO/SELF REFRESH; WD-MAX |
| HTS Code | 8542.32.00.36 |
| Subcategory | DRAMs |
| Technology | CMOS |
| Terminal Position | ZIG-ZAG |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 1.8V |
| Terminal Pitch | 0.6mm |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 200 |
| Operating Supply Voltage | 1.8V |
| Number of Elements | 16 |
| Temperature Grade | COMMERCIAL |
| Max Supply Voltage | 1.9V |
| Min Supply Voltage | 1.7V |
| Memory Size | 4GB |
| Number of Ports | 1 |
| Speed | 800MT/s |
| Memory Type | DDR2 SDRAM |
| Clock Frequency | 400MHz |
| Data Bus Width | 64b |
| Organization | 512MX64 |
| Output Characteristics | 3-STATE |
| Memory Width | 64 |
See Relate Datesheet