| Parameters | |
|---|---|
| Power - Output | 150W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 300W |
| Voltage - Test | 28V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Screw |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Pbfree Code | yes |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Voltage - Rated | 65V |
| Subcategory | FET General Purpose Power |
| Terminal Position | RADIAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 16A |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 200°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Current - Test | 250mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Continuous Drain Current (ID) | 16A |
| Gate to Source Voltage (Vgs) | 40V |
| Gain | 15 dB |
| Drain to Source Breakdown Voltage | 65V |