| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 5 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | AVALANCHE RATED, UL RECOGNIZED |
| Subcategory | FET General Purpose Power |
| Terminal Position | SINGLE |
| Terminal Form | THROUGH-HOLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T5 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 2 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Tool Type | Megohmmeter |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain-source On Resistance-Max | 0.05Ohm |
| Pulsed Drain Current-Max (IDM) | 130A |
| DS Breakdown Voltage-Min | 250V |
| Avalanche Energy Rating (Eas) | 400 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 125W |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet