JANTX2N3501

JANTX2N3501

JANTX2N3501 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from American Microsemiconductor, Inc. stock available at Feilidi


  • Manufacturer: American Microsemiconductor, Inc.
  • Origchip NO: 63-JANTX2N3501
  • Package: TO-205AD, TO-39-3 Metal Can
  • Datasheet: PDF
  • Stock: 295
  • Description: JANTX2N3501 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from American Microsemiconductor, Inc. stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Supplier Device Package TO-39 (TO-205AD)
Operating Temperature -65°C~200°C TA
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/366
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Number of Elements 1
Polarity NPN
Power Dissipation 1W
Power - Max 1W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 150V
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 300mA
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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