IR2112PBF
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 14-DIP (0.300, 7.62mm) |
| Number of Pins | 14 |
| Manufacturer Package Identifier | 14-Lead PDIP |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 14 |
| ECCN Code | EAR99 |
| Type | Integrated Circuit (IC) |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1.6W |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 250 |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IR2112PBF |
| Number of Outputs | 2 |
| Output Voltage | 20V |
| Max Output Current | 500mA |
| Operating Supply Voltage | 15V |
| Nominal Supply Current | 180μA |
| Power Dissipation | 1.6W |
| Output Current | 250mA |
| Max Supply Current | 180μA |
| Propagation Delay | 180 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 30 ns |
| Max Output Voltage | 20V |
| Rise Time | 130ns |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 30 ns |
| Min Output Voltage | 10V |
| Rise / Fall Time (Typ) | 80ns 40ns |
| Channel Type | Independent |
| Turn On Time | 0.18 μs |
| Output Peak Current Limit-Nom | 0.5A |
| Driven Configuration | High-Side or Low-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 250mA 500mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 6V 9.5V |
| Turn Off Time | 0.16 μs |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 4.9276mm |
| Length | 20.1676mm |
| Width | 7.11mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
IR2112PBF Overview
For greater flexibility, its 14-DIP (0.300, 7.62mm) package is used.The packaging method is indicated by Tube.The device is mounted in the direction of Through Hole.A supply voltage of 10V~20V demonstrates its superiority.A gate type of IGBT, N-Channel MOSFET has been used in its design.This device is allowed to operate in a temperature range of -40°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.There are 14 terminations to form the base of its configuration.You will find various related parts under the base part number IR2112PBF.In this case, Through Hole indicates how the device is mounted.Mosfet driver is configured wMosfet driverh 14 pins when designing.The device is specifically designed to operate at 15V volts.There is a maximum output current of 500mA.This subcategory of MOSFET Drivers has a number of useful electronic components.Maximum (Bootstrap) voltage can be up to 600V.Based on its basis, it integrates 2 outputs.Mosfet driver supports an output current of 250mA.Using 1.6W as an example, the maximum power dissipation shows how well it is able to transfer and conduct power loss without becoming overheated.To maintain higher stability, the supply current should always be 180μA.When this voltage is produced, it is marked as 20V.Mosfet gate drivers is recommended that the operating voltage of the supply be set at 15V.A maximum voltage of 20V should be maintained for the output voltage.
IR2112PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.6W
IR2112PBF Applications
There are a lot of Infineon Technologies IR2112PBF gate drivers applications.
- Refrigerator
- Isolated Supplies for Motor Control
- 3-Phase Motor Inverter Driver
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Motor Drives
- LCD/LCoS/DLP portable and embedded pico projectors
- Welding
- Power factor correction (PFC) circuits
- Industrial Modules
- High power buffers