IGN1011L1200

IGN1011L1200

GAN, RF POWER TRANSISTOR, L-BAND


  • Manufacturer: Integra Technologies Inc.
  • Origchip NO: 377-IGN1011L1200
  • Package: -
  • Datasheet: PDF
  • Stock: 742
  • Description: GAN, RF POWER TRANSISTOR, L-BAND (Kg)

Details

Tags

Parameters
Factory Lead Time 4 Weeks
Surface Mount YES
Transistor Element Material GALLIUM NITRIDE
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-CDFM-F2
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
DS Breakdown Voltage-Min 180V
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band L B
RoHS Status ROHS3 Compliant
See Relate Datesheet

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