HIP6601BECBZ
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) Exposed Pad |
| Surface Mount | YES |
| Operating Temperature | 0°C~125°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Supply | 10.8V~13.2V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP6601B |
| JESD-30 Code | R-PDSO-G8 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 20ns 20ns |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| High Side Driver | YES |
| High Side Voltage - Max (Bootstrap) | 15V |
| Height Seated (Max) | 1.68mm |
| Length | 4.89mm |
| Width | 3.9mm |
| RoHS Status | ROHS3 Compliant |
HIP6601BECBZ Overview
A higher degree of flexibility is achieved by adopting its 8-SOIC (0.154, 3.90mm Width) Exposed Pad package.Tube is the form of the package.This device is equipped with 2 drivers for its configuration.In this case, gate drivers is mounted along the way of Surface Mount.In the absence of a power supply voltage of 10.8V~13.2V V, it is able to demonstrate its superiority.A gate type of N-Channel MOSFET is used in its design.This device is allowed to operate in a temperature range of 0°C~125°C TJ.Non-Inverting is the input type used in this program.As a result of its configuration, it contains a maximum of 8 terminations.There are various parts that can be found under its base part number HIP6601B.The device is specifically designed to operate at 12V volts.There can be a voltage up to 15V on the high-side (Bootstrap).
HIP6601BECBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V
HIP6601BECBZ Applications
There are a lot of Renesas Electronics America Inc. HIP6601BECBZ gate drivers applications.
- Solar power supplies
- Portable computers
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Topologies
- Smart Phones
- Isolated Supplies for controller area network (CAN),
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Industrial Motor Inverter - Power Tools, Robotics
- Line drivers
- Multicolor LED/laser displays