HIP2101IBZ
| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Voltage - Supply | 9V~14V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP2101 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.056 µs |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 2.2V |
| Turn Off Time | 0.056 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1.75mm |
| Length | 4.9mm |
| Width | 3.9mm |
| RoHS Status | ROHS3 Compliant |
HIP2101IBZ Overview
A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) package.The packaging method is indicated by Tube.This device is equipped with 2 drivers for its configuration.In the direction of Surface Mount, gate drivers is mounted.When the supply voltage is 9V~14V it is able to demonstrate its superiority.This device is designed with a N-Channel MOSFET gate type.In this device, temperatures must not exceed -55°C~150°C TJ.Input type of Non-Inverting is used.It's configured with 8 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number HIP2101.The device is specifically designed to operate at 12V volts.The board contains 8 pins for component connections.Ideally, the high-side voltage should not exceed 114V.
HIP2101IBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101IBZ Applications
There are a lot of Renesas Electronics America Inc. HIP2101IBZ gate drivers applications.
- Pulse transformer drivers
- Welding
- High current laser/LED systems
- White Goods - Air Conditioner, Washing Machine,
- Refrigerator
- Power factor correction (PFC) circuits
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
- Isolated Supplies for controller area network (CAN),
- AC-DC Inverters
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,