HIP2101EIBT
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) Exposed Pad |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| Terminal Finish | TIN LEAD |
| Voltage - Supply | 9V~14V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | COMMERCIAL |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.056 µs |
| Output Peak Current Limit-Nom | 2A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 2.2V |
| Turn Off Time | 0.056 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1.68mm |
| Length | 4.89mm |
| Width | 3.9mm |
| RoHS Status | Non-RoHS Compliant |
HIP2101EIBT Overview
In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) Exposed Pad is used.A packaging method of Tape & Reel (TR) is used.This device is equipped with 2 drivers for its configuration.There is a mounting bracket in the way of Surface Mount.When the supply voltage is 9V~14V it is able to demonstrate its superiority.N-Channel MOSFET is the gate type used for this design.This device is allowed to operate in a temperature range of -55°C~150°C TJ.Non-Inverting is used as its input type.Initially, the configuration is composed of 8 terminations.A voltage of 12V is required for its operation.The number of component pins is 8.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 114V.
HIP2101EIBT Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101EIBT Applications
There are a lot of Rochester Electronics, LLC HIP2101EIBT gate drivers applications.
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Automotive Applications
- High power buffers
- High-voltage isolated DC-DC converters
- Commercial and agricultural vehicles (CAV)
- Telecom switch mode power supplies
- Motor Controls
- Portable Media Players
- Industrial Motor Inverter - Power Tools, Robotics
- Isolated Gate Driver Supplies