HIP2100IRZ
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 16-VQFN Exposed Pad |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 16 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Voltage - Supply | 9V~14V |
| Terminal Position | QUAD |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Terminal Pitch | 0.8mm |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP2100 |
| Pin Count | 16 |
| JESD-30 Code | S-PQCC-N16 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.045 µs |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 4V 7V |
| Turn Off Time | 0.045 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1mm |
| Length | 5mm |
| Width | 5mm |
| RoHS Status | ROHS3 Compliant |
HIP2100IRZ Overview
Gate drivers provides greater flexibilGate driversy to use the 16-VQFN Exposed Pad package.A package of Tube has been used.Configuration is based on 2 drivers.Surface Mount is mounted in the way of the device.Gate drivers can demonstrate Gate driverss superiorGate driversy wGate driversh a 9V~14V supply voltage.A gate type of N-Channel MOSFET is used in its design.-55°C~150°C TJ is the allowed temperature range for this device.Non-Inverting is used as the input type in this program.Initially, the configuration is composed of 16 terminations.You will find various related parts under the base part number HIP2100.With a supply voltage of 12V, it is designed to operate.A board with 16 component pins is available.The high-side voltage - Max (Bootstrap) can be up to 114V.
HIP2100IRZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2100IRZ Applications
There are a lot of Renesas Electronics America Inc. HIP2100IRZ gate drivers applications.
- Industrial Power Supplies
- High frequency line drivers
- Refrigerator
- AC-DC Inverters
- High-voltage isolated DC-DC converters
- Digitally controlled power supplies
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- DC/DC converters
- Portable Media Players
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,