Parameters | |
---|---|
Feedback Cap-Max (Crss) | 1 pF |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Current - Drain (Idss) @ Vds (Vgs=0) | 4mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 500mV @ 10nA |
Voltage - Breakdown (V(BR)GSS) | 25V |
Power Gain-Min (Gp) | 10dB |
Current Drain (Id) - Max | 30mA |
RoHS Status | Non-RoHS Compliant |
Factory Lead Time | 8 Weeks |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
JESD-30 Code | R-PDSO-G3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | DEPLETION MODE |
Power - Max | 350mW |
FET Type | N-Channel |
Transistor Application | AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 15V |
FET Technology | JUNCTION |
Power Dissipation-Max (Abs) | 0.35W |