BS2132F-E2
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 28-SOIC (0.295, 7.50mm Width) |
| Operating Temperature | -40°C~125°C TA |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Supply | 11.5V~20V |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 125ns 50ns |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
| Channel Type | 3-Phase |
| Number of Drivers | 3 |
| Driven Configuration | High-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.8V 2.6V |
| High Side Voltage - Max (Bootstrap) | 600V |
| RoHS Status | ROHS3 Compliant |
BS2132F-E2 Overview
The 28-SOIC (0.295, 7.50mm Width) package offers greater flexibility.Configuration is supported by 3 drivers.There is a mounting bracket in the way of Surface Mount.In the absence of a 11.5V~20V supply voltage, its superiority can be demonstrated.Gate type IGBT, N-Channel MOSFET has been used in its design.This device is allowed to operate in a temperature range of -40°C~125°C TA.Non-Inverting is used as the input type.Its interface IC is HALF BRIDGE BASED MOSFET DRIVER.A high-side voltage can be set up to 600V (Bootstrap).
BS2132F-E2 Features
3 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V
BS2132F-E2 Applications
There are a lot of ROHM Semiconductor BS2132F-E2 gate drivers applications.
- Solar inverters
- Power factor correction (PFC) circuits
- Pulse transformer drivers
- High current laser/LED systems
- Dual-Battery Systems
- PCMCIA applications
- Multicolor LED/laser displays
- Isolated Supplies for controller area network (CAN),
- Head-up and Head mounted displays
- High-voltage isolated DC-DC converters