BLA6G1011L-200RG,1
| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Package / Case | SOT-502D |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tray |
| Published | 2011 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Voltage - Rated | 65V |
| Current Rating (Amps) | 49A |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Frequency | 1.03GHz~1.09GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BLA6G1011 |
| Reference Standard | IEC-60134 |
| JESD-30 Code | R-CDFM-F2 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 100mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Gain | 20dB |
| Drain Current-Max (Abs) (ID) | 49A |
| DS Breakdown Voltage-Min | 65V |
| Power - Output | 200W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 28V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet