AOTF10B60D

AOTF10B60D

IGBT 600V 20A 42W TO220F


Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series Alpha IGBT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 42W
Input Type Standard
Power - Max 42W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 20A
Reverse Recovery Time 105 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 10A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 10A
Gate Charge 17.4nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 10ns/72ns
Switching Energy 260μJ (on), 70μJ (off)
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
Factory Lead Time 18 Weeks
Mount Through Hole
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good