2N5179
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Package / Case | TO-72 |
| Number of Pins | 4 |
| Packaging | Bulk |
| Published | 2013 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 2GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation-Max | 200mW |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 2 GHz |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 50mA |
| Collector Emitter Breakdown Voltage | 12V |
| Gain | 15 dB |
| Transition Frequency | 900MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Frequency - Transition | 2GHz |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 2.5V |
| hFE Min | 25 |
| Continuous Collector Current | 50mA |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet