2N4393-E3
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 100Ohm |
| Additional Feature | LOW INSERTION LOSS |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.8W |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 1.8W |
| Case Connection | GATE |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 20V |
| Breakdown Voltage | -55V |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 5mA |
| Gate to Source Voltage (Vgs) | -40V |
| FET Technology | JUNCTION |
| Drain to Source Resistance | 100Ohm |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 20V |
| Voltage - Cutoff (VGS off) @ Id | 500mV @ 1nA |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Resistance - RDS(On) | 100Ohm |
| Height | 5.33mm |
| Length | 5.84mm |
| Width | 5.84mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet