2N3716
| Parameters | |
|---|---|
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 800mV |
| Frequency - Transition | 4MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 50 |
| DC Current Gain-Min (hFE) | 30 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Package / Case | TO-3 |
| Published | 2001 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Frequency | 4MHz |
| Pin Count | 2 |
| JESD-30 Code | O-MBFM-P2 |
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | SINGLE |
| Power Dissipation-Max | 150W |
| Power Dissipation | 150W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 10A |
| Collector Emitter Breakdown Voltage | 80V |
See Relate Datesheet