2N2270
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Package / Case | TO-39 |
| Transistor Element Material | SILICON |
| Published | 2012 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | O-MBCY-W3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 200°C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation-Max | 1W |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Collector Emitter Voltage (VCEO) | 900mV |
| Max Collector Current | 1A |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 900mV |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 50 |
| DC Current Gain-Min (hFE) | 50 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet