ZXTP2008GTA

ZXTP2008GTA

ZXTP2008GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXTP2008GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 985
  • Description: ZXTP2008GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

Tags

Parameters
Width 3.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -30V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5.5A
Frequency 110MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTP2008
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 210mV @ 500mA, 5.5A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -210mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 7V
hFE Min 100
Continuous Collector Current -5.5A
Height 1.65mm
Length 6.7mm
See Relate Datesheet

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