ZXTD619MCTA

ZXTD619MCTA

Trans GP BJT NPN 50V 4A 8-Pin DFN EP T/R


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXTD619MCTA
  • Package: 8-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 892
  • Description: Trans GP BJT NPN 50V 4A 8-Pin DFN EP T/R (Kg)

Details

Tags

Parameters
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 2.45W
Peak Reflow Temperature (Cel) 260
Frequency 165MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 2.45W
Case Connection COLLECTOR
Power - Max 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 165MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 4A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 165MHz
Collector Emitter Saturation Voltage 270mV
Max Breakdown Voltage 50V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good