 
    | Parameters | |
|---|---|
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 2W | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 10 ns | 
| FET Type | P-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 150 Ω @ 50mA, 10V | 
| Factory Lead Time | 17 Weeks | 
| Vgs(th) (Max) @ Id | 4.5V @ 1mA | 
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 25V | 
| Contact Plating | Tin | 
| Current - Continuous Drain (Id) @ 25°C | 75mA Ta | 
| Mount | Surface Mount | 
| Rise Time | 15ns | 
| Drain to Source Voltage (Vdss) | 450V | 
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 
| Mounting Type | Surface Mount | 
| Vgs (Max) | ±20V | 
| Package / Case | TO-261-4, TO-261AA | 
| Fall Time (Typ) | 20 ns | 
| Turn-Off Delay Time | 15 ns | 
| Weight | 7.994566mg | 
| Continuous Drain Current (ID) | 75mA | 
| Transistor Element Material | SILICON | 
| Gate to Source Voltage (Vgs) | 20V | 
| Drain Current-Max (Abs) (ID) | 0.075A | 
| Feedback Cap-Max (Crss) | 5 pF | 
| Operating Temperature | -55°C~150°C TJ | 
| Turn Off Time-Max (toff) | 35ns | 
| Turn On Time-Max (ton) | 25ns | 
| Packaging | Tape & Reel (TR) | 
| Height | 1.65mm | 
| Length | 6.7mm | 
| Published | 2006 | 
| Width | 3.7mm | 
| Radiation Hardening | No | 
| JESD-609 Code | e3 | 
| Pbfree Code | no | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Part Status | Active | 
| Lead Free | Lead Free | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 4 | 
| ECCN Code | EAR99 | 
| Resistance | 150Ohm | 
| Voltage - Rated DC | -450V | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Current Rating | -75mA | 
| Pin Count | 4 | 
| JESD-30 Code | R-PDSO-G4 | 
| Number of Elements | 1 | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 2W Ta |