 
    | Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-261-4, TO-261AA | 
| Number of Pins | 4 | 
| Weight | 7.994566mg | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Cut Tape (CT) | 
| Published | 2000 | 
| JESD-609 Code | e3 | 
| Pbfree Code | no | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 4 | 
| ECCN Code | EAR99 | 
| Resistance | 1Ohm | 
| Terminal Finish | Matte Tin (Sn) | 
| Additional Feature | FAST SWITCHING | 
| Voltage - Rated DC | 60V | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | 260 | 
| Current Rating | 1A | 
| Time@Peak Reflow Temperature-Max (s) | 40 | 
| Number of Elements | 1 | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 2W Ta | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 2W | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 8 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 1 Ω @ 1.5A, 10V | 
| Vgs(th) (Max) @ Id | 3V @ 1mA | 
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V | 
| Current - Continuous Drain (Id) @ 25°C | 1A Ta | 
| Rise Time | 12ns | 
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V | 
| Vgs (Max) | ±20V | 
| Fall Time (Typ) | 15 ns | 
| Turn-Off Delay Time | 12 ns | 
| Continuous Drain Current (ID) | 1A | 
| Threshold Voltage | 1.3V | 
| Gate to Source Voltage (Vgs) | 20V | 
| Drain Current-Max (Abs) (ID) | 1A | 
| Drain to Source Breakdown Voltage | 60V | 
| Pulsed Drain Current-Max (IDM) | 8A | 
| Height | 1.65mm | 
| Length | 6.7mm | 
| Width | 3.7mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free |