| Parameters | |
|---|---|
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Published | 2016 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | UL RECOGNIZED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PUFM-X4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 789W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7m Ω @ 150A, 10V |
| Vgs(th) (Max) @ Id | 5.1V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds | 21000pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 220A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 220A |
| Drain-source On Resistance-Max | 0.007Ohm |
| Pulsed Drain Current-Max (IDM) | 520A |
| DS Breakdown Voltage-Min | 200V |
| Avalanche Energy Rating (Eas) | 1200 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 20 Weeks |
| Mount | Screw |