TP0101K-T1-E3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Packaging | Cut Tape (CT) |
| Published | 2014 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 650mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | LOW THRESHOLD |
| Subcategory | Other Transistors |
| Max Power Dissipation | 350mW |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 350mW |
| Turn On Delay Time | 25 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 650m Ω @ 580mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 50μA |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | -580mA |
| Threshold Voltage | 700mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 0.58A |
| Drain to Source Breakdown Voltage | -20V |
| Nominal Vgs | -700 mV |
| Height | 1.02mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet