| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| Series | DTMOSII |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 144W Tc |
| Element Configuration | Single |
| Power Dissipation | 144W |
| Turn On Delay Time | 60 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Rise Time | 30ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 75 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Height | 19mm |
| Length | 40.5mm |
| Width | 4.8mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |