SUP60N10-18P-E3
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 60A |
| Threshold Voltage | 4.5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Nominal Vgs | 4.5 V |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 18.3mOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3.75W Ta 150W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.75W |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 18.3m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 100V |
See Relate Datesheet