SUM85N15-19-E3
| Parameters | |
|---|---|
| Length | 10.41mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.437803g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2009 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 19mOhm |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Voltage | 150V |
| Power Dissipation-Max | 3.75W Ta 375W Tc |
| Element Configuration | Single |
| Current | 85A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.75W |
| Turn On Delay Time | 22 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 19m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4750pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 85A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 170ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 40 ns |
| Reverse Recovery Time | 130 ns |
| Continuous Drain Current (ID) | 85A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 150V |
| Dual Supply Voltage | 150V |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | 2 V |
| Height | 4.826mm |
See Relate Datesheet