STU4N80K5

STU4N80K5

MOSFET N-CH 800V 3A IPAK


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STU4N80K5
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 347
  • Description: MOSFET N-CH 800V 3A IPAK (Kg)

Details

Tags

Parameters
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 74.5 mJ
Height 6.2mm
Length 6.6mm
Width 2.4mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STU4N
Number of Elements 1
Number of Channels 1
See Relate Datesheet

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