STN4NF03L
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 6.5A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 26A |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.8mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | SOT-223-P008 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 50mOhm |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 6.5A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STN4N |
| Pin Count | 4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.3W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| Rise Time | 100ns |
See Relate Datesheet