STN3P6F6
| Parameters | |
|---|---|
| Drain Current-Max (Abs) (ID) | 3A |
| Drain to Source Breakdown Voltage | -60V |
| Max Junction Temperature (Tj) | 175°C |
| Height | 1.9mm |
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Length | 6.7mm |
| Mount | Surface Mount |
| Width | 3.7mm |
| Mounting Type | Surface Mount |
| REACH SVHC | No SVHC |
| Package / Case | TO-261-4, TO-261AA |
| RoHS Status | ROHS3 Compliant |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Lead Free | Lead Free |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ VI |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 130MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| Base Part Number | STN3P |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.6W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.4 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 160m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 48V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V |
| Rise Time | 5.3ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.7 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | -3A |
| Threshold Voltage | -4V |
| Gate to Source Voltage (Vgs) | 20V |
See Relate Datesheet