STI28N60M2
| Parameters | |
|---|---|
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 170W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 22A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain Current-Max (Abs) (ID) | 22A |
| Drain-source On Resistance-Max | 0.15Ohm |
| Pulsed Drain Current-Max (IDM) | 88A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 350 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Series | MDmesh™ M2 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Base Part Number | STI28N |
See Relate Datesheet