STGWA60NC60WDR
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 340W |
| Base Part Number | STGWA60 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 340W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.6V |
| Max Collector Current | 130A |
| Reverse Recovery Time | 42 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 69 ns |
| Test Condition | 390V, 40A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 343 ns |
| Gate Charge | 195nC |
| Current - Collector Pulsed (Icm) | 250A |
| Td (on/off) @ 25°C | 40ns/240ns |
| Switching Energy | 743μJ (on), 560μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet