| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~175°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | VOLTAGE CLAMPING |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 125W |
| Current Rating | 20A |
| Base Part Number | STGP10 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 125W |
| Input Type | Standard |
| Turn On Delay Time | 1.3 μs |
| Transistor Application | AUTOMOTIVE IGNITION |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 9.2 μs |
| Collector Emitter Voltage (VCEO) | 1.8V |
| Max Collector Current | 20A |
| Continuous Drain Current (ID) | 20A |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 440V |
| Collector Emitter Saturation Voltage | 1.8V |
| Turn On Time | 860 ns |
| Test Condition | 328V, 10A, 1k Ω, 5V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 4.5V, 10A |
| Turn Off Time-Nom (toff) | 17800 ns |
| Gate Charge | 28nC |
| Current - Collector Pulsed (Icm) | 40A |
| Td (on/off) @ 25°C | 1.3μs/8μs |
| Switching Energy | 2.4mJ (on), 5mJ (off) |
| Gate-Emitter Thr Voltage-Max | 2.4V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |