STGP100N30
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | STripFET™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 250W |
| Base Part Number | STGP100 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 250W |
| Transistor Application | GENERAL PURPOSE SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 330V |
| Max Collector Current | 90A |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 330V |
| Test Condition | 180V, 25A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 310 ns |
| Td (on/off) @ 25°C | -/134ns |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet