STGE200NB60S
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Chassis Mount, Panel, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Number of Pins | 4 |
| Weight | 28.349523g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Series | PowerMESH™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel (Ni) |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 600W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Current Rating | 150A |
| Base Part Number | STGE200 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation | 600W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 64 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 112ns |
| Drain to Source Voltage (Vdss) | 600V |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Turn-Off Delay Time | 2.4 μs |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 200A |
| Continuous Drain Current (ID) | 200A |
| Current - Collector Cutoff (Max) | 500μA |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.2V |
| Input Capacitance | 1.56nF |
| Turn On Time | 170 ns |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 4600 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 1.56nF @ 25V |
| VCEsat-Max | 1.6 V |
| Height | 9.1mm |
| Length | 38.2mm |
| Width | 25.5mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
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