STGD7NB60ST4
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 55W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 7A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STGD7 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 55W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | MOTOR CONTROL |
| Drain to Source Voltage (Vdss) | 600V |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 15A |
| Continuous Drain Current (ID) | 7A |
| JEDEC-95 Code | TO-252AA |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.6V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 1160 ns |
| Test Condition | 480V, 7A, 1k Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 7A |
| Gate Charge | 33nC |
| Current - Collector Pulsed (Icm) | 60A |
| Td (on/off) @ 25°C | 700ns/- |
| Switching Energy | 3.5mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
See Relate Datesheet