STGD5NB120SZ-1
| Parameters | |
|---|---|
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount, Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 75W |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STGD5 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 690 ns |
| Power - Max | 75W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 12.1 μs |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 10A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Max Breakdown Voltage | 1.2kV |
| Turn On Time | 850 ns |
| Test Condition | 960V, 5A, 1k Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 5A |
| Turn Off Time-Nom (toff) | 14100 ns |
| Td (on/off) @ 25°C | 690ns/12.1μs |
| Switching Energy | 2.59mJ (on), 9mJ (off) |
See Relate Datesheet