STGD3NB60SD-1
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 48W |
| Base Part Number | STGD3 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 48W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 6A |
| Reverse Recovery Time | 1.7 μs |
| Collector Emitter Breakdown Voltage | 600V |
| Test Condition | 480V, 3A, 1k Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 3A |
| Gate Charge | 18nC |
| Current - Collector Pulsed (Icm) | 25A |
| Td (on/off) @ 25°C | 125μs/3.4μs |
| Switching Energy | 1.1mJ (on), 1.15mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 4.5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet