STGB18N40LZT4
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | VOLTAGE CLAMPING |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 150W |
| Terminal Form | GULL WING |
| Base Part Number | STGB18 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Logic |
| Turn On Delay Time | 650 ns |
| Power - Max | 150W |
| Transistor Application | AUTOMOTIVE IGNITION |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 13.5 μs |
| Collector Emitter Voltage (VCEO) | 360V |
| Max Collector Current | 30A |
| Collector Emitter Breakdown Voltage | 420V |
| Collector Emitter Saturation Voltage | 1.35V |
| Max Breakdown Voltage | 420V |
| Turn On Time | 4450 ns |
| Test Condition | 300V, 10A, 5V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 4.5V, 10A |
| Turn Off Time-Nom (toff) | 22200 ns |
| Gate Charge | 29nC |
| Current - Collector Pulsed (Icm) | 40A |
| Td (on/off) @ 25°C | 650ns/13.5μs |
| Gate-Emitter Voltage-Max | 16V |
| Height | 4.6mm |
| Length | 10.4mm |
| Width | 9.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet