| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Additional Feature | VOLTAGE CLAMPING |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 150W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STGB18 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Logic |
| Power - Max | 150W |
| Transistor Application | AUTOMOTIVE IGNITION |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 360V |
| Max Collector Current | 30A |
| Collector Emitter Breakdown Voltage | 420V |
| Turn On Time | 4450 ns |
| Test Condition | 300V, 10A, 5V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 4.5V, 10A |
| Turn Off Time-Nom (toff) | 22200 ns |
| Gate Charge | 29nC |
| Current - Collector Pulsed (Icm) | 40A |
| Td (on/off) @ 25°C | 650ns/13.5μs |
| Gate-Emitter Voltage-Max | 16V |
| RoHS Status | ROHS3 Compliant |