STD830CP40
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| HTS Code | 8541.29.00.95 |
| Subcategory | BIP General Purpose Small Signal |
| Max Power Dissipation | 3W |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STD830 |
| Pin Count | 8 |
| JESD-30 Code | R-PDIP-T8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS |
| Power - Max | 3W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN AND PNP |
| Transistor Type | NPN, PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 18 @ 700mA 5V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 400V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet